NE3521M04-T2-A
RF MOSFET GAAS HJ-FET 2VManufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation's NE3521M04-T2-A is an N-Channel GaAs HJ-FET RF MOSFET designed for high-frequency applications. This component offers a noise figure of 0.85dB and a gain of 11dB at a test frequency of 20GHz, with a test current of 6mA. The device is rated for 4V and operates at a typical test voltage of 2V. It is supplied in a 4-SMD, Flat Leads package, presented in Bulk packaging. This RF FET is commonly utilized in telecommunications infrastructure and wireless communication systems.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 70mA |
| Frequency | 20GHz |
| Configuration | N-Channel |
| Power - Output | - |
| Gain | 11dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.85dB |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 6 mA |
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