NE3517S03-T1D-A
RF MOSFET HFET 2V S03Manufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3517S03-T1D-A is a high-performance RF MOSFET, specifically a Heterojunction Field-Effect Transistor (HFET). This component is designed for demanding radio frequency applications, operating at frequencies up to 20GHz. With a test current of 10mA, it exhibits a typical gain of 13.5dB and a low noise figure of 0.7dB, making it suitable for amplifying weak signals. The device is rated for 4V and tested at 2V, with a current rating of 70mA. It is supplied in a 4-SMD, Flat Leads package (S03), delivered in Bulk packaging. This RF MOSFET is utilized across various industries requiring advanced wireless communication capabilities, including telecommunications and satellite systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 70mA |
| Frequency | 20GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | HFET |
| Noise Figure | 0.7dB |
| Supplier Device Package | S03 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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