NE3515S02-T1D-A
RF MOSFET HFET 2V S02Manufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3515S02-T1D-A is a high-performance RF MOSFET designed for demanding wireless applications. This HFET technology device operates at a 2V test voltage with a typical drain current of 10mA, delivering a gain of 12.5dB at 12GHz. Its excellent noise figure of 0.3dB makes it suitable for sensitive receiver front-ends. The device offers an output power of 14dBm and is supplied in a compact S02 package (4-SMD, Flat Leads) for efficient board space utilization. Applications include base stations, wireless infrastructure, and satellite communications.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 88mA |
| Frequency | 12GHz |
| Power - Output | 14dBm |
| Gain | 12.5dB |
| Technology | HFET |
| Noise Figure | 0.3dB |
| Supplier Device Package | S02 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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