NE3513M04-T2B-A
RF MOSFET GAAS HJ-FET 2V 4MMOLDManufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3513M04-T2B-A is a GaAs HJ-FET N-channel RF MOSFET designed for high-frequency applications. This component offers a typical gain of 13dB at 12GHz, with a noise figure of 0.65dB. It is rated for a drain current of 10mA during testing and has a continuous current rating of 60mA. The device delivers 125mW of output power and operates with a rated voltage of 4V, tested at 2V. The 4-Super Mini Mold package, also known as 4-SMD, Flat Leads, is suitable for compact designs in the telecommunications and wireless infrastructure industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 60mA |
| Frequency | 12GHz |
| Configuration | N-Channel |
| Power - Output | 125mW |
| Gain | 13dB |
| Technology | GaAs HJ-FET |
| Noise Figure | 0.65dB |
| Supplier Device Package | 4-Super Mini Mold |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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