NE3512S02-T1D-A
RF MOSFET HFET 2V S02Manufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3512S02-T1D-A is an RF HFET (Heterostructure Field-Effect Transistor) operating at 2V test voltage. This S02 packaged device offers a nominal gain of 13.5dB at 12GHz with a low noise figure of 0.35dB. The component is rated for 4V and tested at 10mA, with a current rating of 70mA. Typical applications include radio frequency front-end circuits in wireless communications, satellite systems, and radar equipment. The 4-SMD, Flat Leads package is supplied in bulk.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 70mA |
| Frequency | 12GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | HFET |
| Noise Figure | 0.35dB |
| Supplier Device Package | S02 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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