NE3512S02-T1C-A
RF MOSFET HFET 2V S02Manufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3512S02-T1C-A, a high-performance RF HFET, is engineered for demanding wireless applications. This S02 packaged device operates at a 2V test voltage and a 10mA test current, delivering a typical gain of 13.5dB at 12GHz. Its exceptional 0.35dB noise figure makes it ideal for low-noise amplification stages across various frequency bands. The 4-SMD, Flat Leads package with a 70mA current rating ensures robust performance in compact designs. This component finds application in cellular infrastructure, satellite communications, and other high-frequency communication systems where signal integrity and low noise are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 70mA |
| Frequency | 12GHz |
| Power - Output | - |
| Gain | 13.5dB |
| Technology | HFET |
| Noise Figure | 0.35dB |
| Supplier Device Package | S02 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 10 mA |
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