NE3510M04-T2-A
RF MOSFET HFET 2V M04Manufacturer: Renesas Electronics Corporation
Categories: RF FETs, MOSFETs
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Renesas Electronics Corporation NE3510M04-T2-A is an RF FET, utilizing HFET technology. This device operates at a rated voltage of 4V, with a test voltage of 2V and a test current of 15mA. It features a gain of 16dB and a noise figure of 0.45dB, making it suitable for high-frequency applications. The component is designed for operation up to 4GHz. The Supplier Device Package is M04, and the Package / Case is SOT-343F. This component is commonly utilized in wireless communication systems and test and measurement equipment. The product is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Current Rating (Amps) | 97mA |
| Frequency | 4GHz |
| Power - Output | - |
| Gain | 16dB |
| Technology | HFET |
| Noise Figure | 0.45dB |
| Supplier Device Package | M04 |
| Voltage - Rated | 4 V |
| Voltage - Test | 2 V |
| Current - Test | 15 mA |
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