UPD44325364BF5-E40-FQ1
IC SRAM 36MBIT PAR 165FBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation UPD44325364BF5-E40-FQ1 is a 36Mbit QDR II SRAM memory integrated circuit. This synchronous SRAM features a parallel interface with a memory organization of 1M x 36 and a clock frequency of 250 MHz. The device operates within a voltage supply range of 1.7V to 1.9V and offers a word/page write cycle time of 4ns. Packaged in a 165-FBGA (15x17) surface mount configuration, it is suitable for demanding applications across various industries including networking, telecommunications, and high-performance computing. The operating temperature range for this component is 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-FBGA |
| Mounting Type | Surface Mount |
| Memory Size | 36Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, QDR II |
| Clock Frequency | 250 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 4ns |
| Memory Interface | Parallel |
| Memory Organization | 1M x 36 |
| Programmable | Not Verified |