Home

Products

Integrated Circuits (ICs)

Memory

Memory

UPD44325182BF5-E40-FQ1-A

Banner
productimage

UPD44325182BF5-E40-FQ1-A

IC SRAM 36MBIT PAR 165FBGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation UPD44325182BF5-E40-FQ1-A is a 36Mbit synchronous SRAM memory IC featuring a parallel interface. This component operates at a clock frequency of 250 MHz with a voltage supply range of 1.7V to 1.9V. The memory organization is 2M x 18, and it utilizes QDR II technology for high-speed data transfer. The device is housed in a 165-FBGA (15x17) package suitable for surface mounting and operates within an ambient temperature range of 0°C to 70°C. Its write cycle time is 4ns. The UPD44325182BF5-E40-FQ1-A is commonly employed in networking infrastructure, telecommunications equipment, and high-performance computing applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case165-FBGA
Mounting TypeSurface Mount
Memory Size36Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply1.7V ~ 1.9V
TechnologySRAM - Synchronous, QDR II
Clock Frequency250 MHz
Memory FormatSRAM
Supplier Device Package165-FBGA (15x17)
Write Cycle Time - Word, Page4ns
Memory InterfaceParallel
Memory Organization2M x 18
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
70T3339S133BF

IC SRAM 9MBIT PARALLEL 208CABGA

product image
70V25L25J

IC SRAM 128KBIT PARALLEL 84PLCC

product image
7134LA55L48B

IC SRAM 32KBIT PARALLEL 48LCC