RMLV0816BGSD-4S2#HC0
IC SRAM 8MBIT PARALLEL 52TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation RMLV0816BGSD-4S2-HC0 is a high-performance 8Mbit parallel Static Random Access Memory (SRAM) device. This component offers an access time of 45 ns, suitable for demanding applications. The memory is organized as 1M x 8 or 512K x 16, providing flexibility in system design. Operating from a voltage range of 2.4V to 3.6V, the RMLV0816BGSD-4S2-HC0 features a write cycle time of 45 ns. It is packaged in a 52-TSOP II (52-TFSOP) for surface mounting and is supplied on a tape and reel. This SRAM is utilized in various industrial sectors, including telecommunications and consumer electronics, where reliable and fast data storage is critical. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 52-TFSOP (0.350"", 8.89mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 52-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
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