RMLV0816BGSD-4S2#HA1
IC SRAM 8MBIT PARALLEL 52TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation RMLV0816BGSD-4S2-HA1 is an 8Mbit parallel SRAM memory device featuring a 1M x 8 or 512K x 16 organization. This volatile memory component offers a fast 45 ns access time and a 45 ns write cycle time. Designed for surface mounting, it is supplied in a 52-TSOP II package. The operating voltage range is 2.4V to 3.6V, with an operating temperature range of -40°C to 85°C. This device is suitable for applications in industrial, automotive, and consumer electronics sectors where high-speed, non-volatile data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 52-TFSOP (0.350"", 8.89mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 52-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
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