RMLV0816BGSD-4S2#AA1
IC SRAM 8MBIT PARALLEL 52TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation RMLV0816BGSD-4S2-AA1 is an 8Mbit volatile SRAM memory component featuring a parallel interface. Designed for high-performance applications, this device offers a fast access time of 45 ns and a write cycle time of 45 ns. Its memory organization is configurable as either 1M x 8 or 512K x 16, providing flexibility for various system designs. Operating within a supply voltage range of 2.4V to 3.6V, the RMLV0816BGSD-4S2-AA1 is suitable for demanding environments, with an operating temperature range of -40°C to 85°C. The component is housed in a 52-TSOP II package, facilitating surface mount integration. This memory solution finds application in sectors such as industrial automation, automotive systems, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 52-TFSOP (0.350"", 8.89mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 52-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
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