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RMLV0816BGSB-4S2#HA0

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RMLV0816BGSB-4S2#HA0

IC SRAM 8MBIT PARALLEL 44TSOP II

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation RMLV0816BGSB-4S2-HA0 is an 8Mbit volatile Synchronous SRAM memory component featuring a parallel interface. This device offers a fast access time of 45 nanoseconds and a write cycle time of 45 nanoseconds, supporting word and page operations. The memory organization is 512K x 16, and it operates with a supply voltage range of 2.4V to 3.6V. Housed in a 44-TSOP II package, this surface-mount component is designed for operation across an industrial temperature range of -40°C to 85°C. Its capabilities make it suitable for applications in automotive, industrial automation, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size8Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.4V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page45ns
Memory InterfaceParallel
Access Time45 ns
Memory Organization512K x 16
ProgrammableNot Verified

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