RMLV0816BGSB-4S2#AA0
IC SRAM 8MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation RMLV0816BGSB-4S2-AA0 is an 8Mbit parallel SRAM memory component. This device offers a 45 ns access time and a fast write cycle time of 45 ns. The memory is organized as 512K x 16 and operates from a supply voltage range of 2.4V to 3.6V. It features a 44-TSOP II package suitable for surface mounting and operates within an industrial temperature range of -40°C to 85°C. This component is utilized in applications across industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
71V016SA20PHGI
IC SRAM 1MBIT PARALLEL 44TSOP II
IDT71T75602S200PFGI8
IC SRAM 18MBIT PARALLEL 100TQFP
7025L55JI
IC SRAM 128KBIT PARALLEL 84PLCC
