RMLV0416EGSB-4S2#HA1
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation RMLV0416EGSB-4S2-HA1 is a 4Mbit parallel SRAM memory component. This volatile memory device features a 45 ns access time and a word/page write cycle time of 45 ns. The memory organization is 256K x 16, providing a total capacity of 4Mbits. It operates with a supply voltage range of 2.7V to 3.6V. The component is housed in a 44-TSOP II package, suitable for surface mounting. The operating temperature range is -40°C to 85°C. This device is commonly utilized in industrial, automotive, and consumer electronics applications requiring high-speed, non-volatile data storage. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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