RMLV0416EGSB-4S2#AA1
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation provides the RMLV0416EGSB-4S2-AA1, a 4Mbit parallel SRAM memory IC. This component features an access time of 45 ns and a word/page write cycle time also of 45 ns, facilitating high-speed data operations. The memory is organized as 256K x 16, offering a robust parallel interface for efficient data transfer. Operating within a voltage range of 2.7V to 3.6V, it maintains a wide operating temperature range of -40°C to 85°C (TA). The RMLV0416EGSB-4S2-AA1 is supplied in a 44-TSOP II package, suitable for surface-mount applications. This volatile memory solution finds application in various industries requiring fast, reliable data storage, including industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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