R1WV6416RBG-5SI#S0
IC SRAM 64MBIT PARALLEL 48TFBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1WV6416RBG-5SI-S0 is a 64Mbit parallel SRAM memory integrated circuit. This component offers an access time of 55 ns, with organization options of 8M x 8 or 4M x 16. The SRAM utilizes a voltage supply range of 2.7V to 3.6V and features a write cycle time of 55ns. The device is housed in a 48-TFBGA (8.5x11) package suitable for surface mounting and is supplied on tape and reel. Operating within an ambient temperature range of -40°C to 85°C, this memory solution is commonly found in industrial automation, telecommunications, and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (8.5x11) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 8M x 8, 4M x 16 |
| Programmable | Not Verified |
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