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R1RW0416DSB-2PR#S1

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R1RW0416DSB-2PR#S1

IC SRAM 4MBIT PARALLEL 44TSOP II

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation R1RW0416DSB-2PR-S1 is a 4Mbit asynchronous SRAM memory IC. Featuring a parallel interface, this component offers a 12 ns access time and a write cycle time of 12 ns. The memory organization is 256K x 16. Supplied in a 44-TSOP II package suitable for surface mounting, it operates within a voltage range of 3V to 3.6V and an ambient temperature range of 0°C to 70°C. This device is commonly utilized in industrial automation, consumer electronics, and telecommunications applications requiring fast and reliable volatile memory solutions. The component is supplied on a tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page12ns
Memory InterfaceParallel
Access Time12 ns
Memory Organization256K x 16

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