R1RW0416DSB-2LR#D1
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1RW0416DSB-2LR-D1 is a high-speed 4Mbit SRAM memory component featuring a parallel interface. This non-volatile memory device offers an access time of 12 ns and a word/page write cycle time of 12 ns, making it suitable for demanding applications. The memory organization is 256K x 16, providing ample capacity for data buffering and storage. Operating within a voltage range of 3V to 3.6V, the R1RW0416DSB-2LR-D1 is designed for surface mount applications and comes in a 44-TSOP II package, specified with a 10.16mm width. Its operating temperature range is from -40°C to 85°C. This component finds application in industrial automation, automotive systems, and consumer electronics where fast, reliable volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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