R1RW0416DSB-2LR#B0
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1RW0416DSB-2LR-B0 is a 4Mbit parallel SRAM memory device. This component features an access time of 12 ns and is organized as 256K x 16. The R1RW0416DSB-2LR-B0 operates from a 3V to 3.6V supply voltage and has a word write cycle time of 12 ns. It is housed in a 44-TSOP II package, suitable for surface mounting. This volatile memory solution is designed for applications requiring high-speed data storage, commonly found in industrial automation, consumer electronics, and telecommunications sectors. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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