R1RW0416DSB-0PR#S1
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation's R1RW0416DSB-0PR-S1 is a 4Mbit asynchronous SRAM memory integrated circuit. This device features a parallel interface with a memory organization of 256K x 16, offering a fast 10 ns access time and a 10 ns write cycle time. The R1RW0416DSB-0PR-S1 operates within a voltage range of 3V to 3.6V and is housed in a 44-TSOP II surface-mount package, measuring 400 mils in width. Designed for general-purpose memory applications, this volatile memory component is suitable for use in industrial and consumer electronics systems. It is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
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