R1RW0416DGE-2PR#B1
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's R1RW0416DGE-2PR-B1 is a 4Mbit Parallel SRAM memory component. Engineered for high-speed data access, it features an impressive 12 ns access time and a write cycle time of 12 ns. The memory organization is 256K x 16, facilitating efficient data handling. This volatile memory operates within a supply voltage range of 3V to 3.6V and is designed for surface mount applications, housed in a 44-SOJ package with a 10.16mm width. The operating temperature range is 0°C to 70°C. This component is suitable for applications in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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