R1RW0416DGE-2PI#B1
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1RW0416DGE-2PI-B1 is a 4Mbit high-speed static random-access memory (SRAM) device. This component features a parallel interface and a memory organization of 256K words by 16 bits, delivering a 12 ns access time. Designed for robust performance, it operates within a supply voltage range of 3V to 3.6V and maintains functionality across an industrial temperature range of -40°C to 85°C. The R1RW0416DGE-2PI-B1 is housed in a compact 44-SOJ surface-mount package, suitable for demanding applications in the automotive and industrial sectors. Its write cycle time is also specified at 12 ns, ensuring efficient data handling.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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