R1RW0416DGE-2PI#B0
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0416DGE-2PI-B0 is a 4Mbit parallel SRAM memory integrated circuit. This component features a memory organization of 256K x 16 and offers a fast access time of 12 ns. Designed for surface mounting within a 44-SOJ package (44-BSOJ, 0.400" width), it operates from a 3V to 3.6V supply voltage. The device is specified for an operating temperature range of -40°C to 85°C. This high-speed SRAM is suitable for applications in industrial control systems, telecommunications infrastructure, and consumer electronics where robust and rapid data storage is critical. The part is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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