R1RW0416DGE-2LR#B1
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0416DGE-2LR-B1 is a 4Mbit asynchronous SRAM memory IC with a parallel interface. Featuring a fast 12 ns access time and a 12 ns write cycle time, this component is organized as 256K x 16. The device operates within a voltage range of 3V to 3.6V and has an operating temperature range of 0°C to 70°C. It is supplied in a 44-SOJ package, specifically a 44-BSOJ with a 0.400" (10.16mm) width. This memory solution is suitable for applications requiring high-speed data storage and retrieval, commonly found in industrial control systems, consumer electronics, and networking equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
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