R1RW0408DGE-2PR#B1
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0408DGE-2PR-B1, a 4Mbit parallel SRAM, offers a 12 ns access time and a 12 ns write cycle time. This volatile memory component features a 512K x 8 memory organization and operates from a 3V to 3.6V supply. It is housed in a 36-SOJ package, specifically a 36-BSOJ with a 10.16mm width, suitable for surface mount applications. Manufactured by Renesas Electronics Corporation, this memory IC is designed for demanding applications across various industries, including industrial automation and telecommunications. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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