R1RW0408DGE-2PI#B0
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0408DGE-2PI-B0 is a 4Mbit parallel SRAM memory device. This component features a 12 ns access time and a 512K x 8 memory organization. The R1RW0408DGE-2PI-B0 operates with a supply voltage range of 3V to 3.6V and has a write cycle time of 12 ns. It is housed in a 36-Lead SOJ (Small Outline J-Lead) package, specifically a 36-BSOJ with a 0.400" (10.16mm) width, designed for surface mount applications. The operating temperature range is -40°C to 85°C. This memory component is commonly utilized in industrial automation, networking infrastructure, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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