R1RW0408DGE-2LR#B1
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0408DGE-2LR-B1 is a 4Mbit parallel SRAM memory component offering a 12 ns access time. This volatile memory features a 512K x 8 organization, utilizing SRAM technology. The component operates from a 3V to 3.6V supply and has a word/page write cycle time of 12 ns. It is housed in a 36-SOJ package and designed for surface mounting. This device finds application in various industrial sectors, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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