R1RW0408DGE-2LR#B0
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation R1RW0408DGE-2LR-B0 is a 4Mbit parallel SRAM memory component. This device offers a rapid 12 ns access time and a memory organization of 512K x 8. It features a 3V to 3.6V operating voltage range and a word/page write cycle time of 12 ns. The R1RW0408DGE-2LR-B0 is housed in a 36-SOJ package, specifically a 36-BSOJ with a 0.400" (10.16mm) width, suitable for surface mount applications. Operating within a temperature range of 0°C to 70°C (TA), this volatile memory component is utilized in various industrial, consumer electronics, and automotive applications demanding high-speed data storage. The product is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
