R1RW0404DGE-2LR#B0
4M HIGH SPEED SRAM (1M X 4-BIT)Manufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RW0404DGE-2LR-B0 is a high-speed Static Random-Access Memory (SRAM) device organized as 1M words by 4-bit. This component offers a 4-megabit (4M) memory capacity, providing efficient data storage solutions. Operating with high speed, it is suitable for applications demanding rapid data access and manipulation. Its Bulk packaging facilitates high-volume integration into electronic systems. This memory IC is commonly employed in industrial automation, automotive systems, and consumer electronics where fast and reliable data buffering is critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Programmable | Not Verified |
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