R1RP0416DSB-2PR#B0
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation R1RP0416DSB-2PR-B0 is a 4Mbit Parallel SRAM memory component. This asynchronous SRAM features a memory organization of 256K x 16 and offers an access time of 12 ns. The device operates from a 4.5V to 5.5V supply and is housed in a 44-TSOP II package suitable for surface mounting. Its write cycle time is also 12 ns. Applications for this memory component can be found in industrial automation, consumer electronics, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
