R1RP0416DSB-2PI#B0
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1RP0416DSB-2PI-B0 is a 4Mbit high-speed CMOS Static Random Access Memory (SRAM) device organized as 256K x 16. Featuring a rapid 12 ns access time, this component utilizes a parallel interface and is housed in a 44-TSOP II package suitable for surface mounting. The R1RP0416DSB-2PI-B0 operates within a voltage range of 4.5V to 5.5V and has a write cycle time of 12 ns. Its robust design and performance characteristics make it a suitable choice for applications in industrial automation, telecommunications equipment, and consumer electronics where reliable, high-speed data storage is critical. The device is supplied in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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