R1RP0416DGE-2PR#B1
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RP0416DGE-2PR-B1 is a 4Mbit volatile SRAM memory component. This device features a parallel interface and a memory organization of 256K x 16, providing a substantial capacity for data storage. With an access time of 12 ns and a write cycle time of 12 ns, it offers rapid data retrieval and storage. The component operates within a supply voltage range of 4.5V to 5.5V and is designed for surface mounting, utilizing a 44-SOJ package. Its operating temperature range is 0°C to 70°C. This memory solution is suitable for applications requiring fast, non-volatile data access, commonly found in industrial control systems, telecommunications infrastructure, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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