R1RP0416DGE-2PR#B0
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RP0416DGE-2PR-B0 is a 4Mbit parallel SRAM memory integrated circuit. This component, with a memory organization of 256K x 16, features a fast access time of 12 ns and a word/page write cycle time of 12 ns. It operates within a voltage supply range of 4.5V to 5.5V and is housed in a 44-SOJ (0.400", 10.16mm width) package, designed for surface mounting. The R1RP0416DGE-2PR-B0 is suitable for applications requiring high-speed data storage and retrieval, commonly found in industrial automation, networking equipment, and consumer electronics. Its operating temperature range is 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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