R1RP0416DGE-2PI#B0
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation presents the R1RP0416DGE-2PI-B0, a 4Mbit parallel SRAM memory component. This device offers a fast access time of 12 ns and a word write cycle time of 12 ns. The memory organization is 256K x 16, providing a substantial data storage capacity. Operating within a voltage range of 4.5V to 5.5V, this volatile memory utilizes SRAM technology. The component is housed in a 44-SOJ package, specifically a 44-BSOJ with a 0.400" width, suitable for surface mount applications. It is designed for operation across an industrial temperature range of -40°C to 85°C. This memory solution is commonly found in applications within the automotive and industrial sectors, where reliable and fast data access is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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