R1RP0408DGE-2PR#B1
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RP0408DGE-2PR-B1 is a 4Mbit parallel SRAM memory component. This device features a 12 ns access time and a 12 ns write cycle time. The memory organization is 512K x 8, with a 4.5V to 5.5V operating voltage. The R1RP0408DGE-2PR-B1 is housed in a 36-SOJ package, specifically a 36-BSOJ with a 0.400" (10.16mm) width. This component is designed for surface mount applications and operates within an ambient temperature range of 0°C to 70°C. Its parallel interface and fast access speeds make it suitable for applications in networking, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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