R1RP0408DGE-2LR#B1
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation R1RP0408DGE-2LR-B1 is a 4Mbit parallel SRAM memory component. This volatile memory features a 12 ns access time and a memory organization of 512K x 8. The device operates with a supply voltage range of 4.5V to 5.5V and has a word/page write cycle time of 12 ns. It is housed in a 36-SOJ package, specifically a 36-BSOJ with a 0.400" (10.16mm) width, designed for surface mounting. The operating temperature range is 0°C to 70°C. This component is suitable for applications in industrial and consumer electronics where fast, reliable data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
