R1RP0408DGE-2LR#B0
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1RP0408DGE-2LR-B0 is a 4Mbit parallel SRAM memory component. This device offers an access time of 12 ns and is organized as 512K x 8. The R1RP0408DGE-2LR-B0 features a 4.5V to 5.5V supply voltage and a write cycle time of 12 ns. The component is housed in a 36-SOJ package, specifically a 36-BSOJ with a 10.16mm width, designed for surface mounting. Operating within a temperature range of 0°C to 70°C, this volatile memory solution is suitable for applications in industrial automation and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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