R1LV3216RSD-7SI#B0
IC SRAM 32MBIT PAR 52TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1LV3216RSD-7SI-B0 is a 32Mbit parallel SRAM memory component. This device offers a memory organization of 4M x 8 or 2M x 16, with an access time of 70 ns and a write cycle time of 70 ns. Operating within a voltage range of 2.7V to 3.6V, it features a volatile memory type. The R1LV3216RSD-7SI-B0 is designed for surface-mount applications and comes in a 52-TSOP II package, specifically a 52-TFSOP with a 0.350" width. Its operational temperature range is -40°C to 85°C. This component is suitable for applications in automotive, industrial, and consumer electronics sectors requiring high-speed data storage and retrieval.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 52-TFSOP (0.350"", 8.89mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 32Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 52-TSOP II |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 4M x 8, 2M x 16 |
| Programmable | Not Verified |
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