R1LV1616HBG-4SI#B0
IC SRAM 16MBIT PARALLEL 48TFBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV1616HBG-4SI-B0 is a 16Mbit asynchronous SRAM device organized as 1M x 16. This component features a parallel memory interface with an access time of 45 ns and a write cycle time of 45 ns. The R1LV1616HBG-I series device operates from a voltage supply range of 2.7V to 3.6V and is specified for an operating temperature range of -40°C to 85°C (TA). It is packaged in a 48-TFBGA (8x9.5) for surface mounting. This high-speed memory solution is commonly utilized in industrial and automotive applications requiring reliable data storage.
Additional Information
Series: R1LV1616HBG-IRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (8x9.5) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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