R1LV0816ASD-5SI#B0
IC SRAM 8MBIT PARALLEL 52TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0816ASD-5SI-B0 is a high-speed 8Mbit parallel synchronous SRAM. This component is organized as 1M x 8 or 512K x 16, offering flexible memory configurations. Featuring an access time of 55 ns and a write cycle time also at 55 ns, it is suitable for demanding applications. The R1LV0816ASD-5SI-B0 operates from a 2.7V to 3.6V supply voltage and is housed in a 52-TSOP II package, designed for surface mount applications. Its operating temperature range is -40°C to 85°C. This SRAM is a critical component in various industrial and consumer electronics systems requiring fast data access and storage.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 52-TFSOP (0.350"", 8.89mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 52-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
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