R1LV0816ASB-7SI#S0
IC SRAM 8MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation's R1LV0816ASB-7SI-S0 is an 8Mbit parallel SRAM memory integrated circuit. Featuring a 512K x 16 memory organization, this component offers a 70 ns access time and a 70 ns write cycle time. The device operates with a supply voltage range of 2.4V to 3.6V and is designed for surface mounting within a 44-TSOP II package. Its volatile memory technology and parallel interface make it suitable for applications requiring high-speed data storage and retrieval. This SRAM is commonly utilized in industrial automation, automotive systems, and consumer electronics where reliable and fast memory performance is critical. The operating temperature range is specified from -40°C to 85°C.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.4V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
