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R1LV0816ASB-7SI#B0

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R1LV0816ASB-7SI#B0

IC SRAM 8MBIT PARALLEL 44TSOP II

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation R1LV0816ASB-7SI-B0 is an 8-Mbit parallel SRAM memory IC. This component features a 512K x 16 memory organization with a 70 ns access time. Designed for surface mount applications, it is housed in a 44-TSOP II package with a 0.400" width. The device operates within a voltage range of 2.4V to 3.6V and supports a write cycle time of 70 ns. This volatile memory solution is suitable for various industrial applications requiring high-speed data storage. The operating temperature range is -40°C to 85°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size8Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.4V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page70ns
Memory InterfaceParallel
Access Time70 ns
Memory Organization512K x 16
ProgrammableNot Verified

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