R1LV0816ASB-5SI#B0
IC SRAM 8MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0816ASB-5SI-B0 is an 8Mbit parallel SRAM memory component. This volatile memory features a memory organization of 512K x 16, offering a fast access time of 55 ns. The component operates with a supply voltage ranging from 2.7V to 3.6V and has a write cycle time of 55 ns. Packaged in a 44-TSOP II (0.400" width) for surface mounting, it is rated for an operating temperature range of -40°C to 85°C. This device is suitable for demanding applications in sectors such as industrial automation, automotive systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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