R1LV0816ABG-5SI#S0
IC SRAM 8MBIT PARALLEL 48TFBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0816ABG-5SI-S0 is a high-performance SRAM memory device. This 8Mbit Parallel SRAM features a memory organization of 512K x 16, providing a total capacity of 8 megabits. With an access time of 55 ns, it is suitable for applications requiring rapid data retrieval. The device operates from a supply voltage range of 2.7V to 3.6V and is designed for surface mounting within a 48-TFBGA (7.5x8.5) package. The operating temperature range is -40°C to 85°C (TA). This component is commonly utilized in industrial automation, telecommunications infrastructure, and automotive electronics where reliable, high-speed volatile memory is critical. The R1LV0816ABG-5SI-S0 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (7.5x8.5) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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