R1LV0816ABG-5SI#B0
IC SRAM 8MBIT PARALLEL 48TFBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0816ABG-5SI-B0 is a high-performance 8-Mbit parallel Static Random-Access Memory (SRAM) device. This component offers a fast access time of 55 ns, enabling efficient data retrieval and storage. The memory organization is 512K x 16, providing 8,388,608 bits of volatile memory. Designed for surface mounting, it utilizes a 48-TFBGA (7.5x8.5) package, ensuring a compact footprint for advanced designs. Operating within a voltage range of 2.7V to 3.6V, the R1LV0816ABG-5SI-B0 is suitable for applications requiring low power consumption and reliable operation across an industrial temperature range of -40°C to 85°C. This memory solution finds application in various demanding sectors, including automotive, industrial automation, and consumer electronics, where speed and density are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (7.5x8.5) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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