R1LV0808ASB-5SI#B0
IC SRAM 8MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation R1LV0808ASB-5SI-B0 is an 8Mbit parallel SRAM memory component. Featuring a 1M x 8 memory organization, this device offers a 55 ns access time and a word/page write cycle time of 55 ns. The R1LV0808ASB-5SI-B0 operates from a 2.7V to 3.6V supply voltage and is specified for an industrial operating temperature range of -40°C to 85°C. Packaged in a 44-TSOP II (0.400", 10.16mm width) for surface mounting, this volatile memory is suitable for applications in industrial automation, medical devices, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
