R1LV0416DSB-7LI#B0
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's R1LV0416DSB-7LI-B0 is a 4Mbit parallel SRAM memory component. This volatile memory features a 70 ns access time and a 256K x 16 organization, delivering a total capacity of 4Mbit. The device operates with a supply voltage range of 2.7V to 3.6V and is housed in a 44-TSOP II package suitable for surface mounting. Its operating temperature range is -40°C to 85°C. This component is utilized in applications requiring high-speed data buffering and temporary storage, commonly found in industrial automation, telecommunications infrastructure, and consumer electronics. The parallel interface and robust design make it a reliable choice for demanding memory applications.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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