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R1LV0414DSB-5SI#B0

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R1LV0414DSB-5SI#B0

IC SRAM 4MBIT PARALLEL 44TSOP II

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation offers the R1LV0414DSB-5SI-B0, a 4Mbit parallel SRAM memory component. This volatile memory features a 256K x 16 organization and a fast 55 ns access time. Designed for surface mount applications, it utilizes a 44-TSOP II package with a 400 mil width. The device operates within a supply voltage range of 2.7V to 3.6V and supports a temperature range of -40°C to 85°C. This component is suitable for applications in industrial automation, consumer electronics, and communications infrastructure where high-speed, reliable data storage is critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization256K x 16
ProgrammableNot Verified

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