R1LV0408DSB-5SI#B0
IC SRAM 4MBIT PARALLEL 32TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0408DSB-5SI-B0 is a 4Mbit asynchronous SRAM memory device with a parallel interface. Organized as 512K x 8, this volatile memory component offers an access time of 55 nanoseconds. The device operates from a supply voltage range of 2.7V to 3.6V and features a write cycle time of 55ns. It is housed in a 32-TSOP II package, suitable for surface mounting. The operating temperature range is -40°C to 85°C (TA). This component finds application in industrial automation, consumer electronics, and telecommunications systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-SOIC (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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